FDFS2P103A

MOSFET P-Ch PowerTrench Integrated

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FDFS2P103A Picture
SeekIC No. : 00163606 Detail

FDFS2P103A: MOSFET P-Ch PowerTrench Integrated

floor Price/Ceiling Price

Part Number:
FDFS2P103A
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/19

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 30 V
Gate-Source Breakdown Voltage : +/- 25 V Continuous Drain Current : - 5.3 A
Resistance Drain-Source RDS (on) : 0.059 Ohms Configuration : Single Dual Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : - 30 V
Package / Case : SOIC-8 Narrow
Gate-Source Breakdown Voltage : +/- 25 V
Configuration : Single Dual Drain
Resistance Drain-Source RDS (on) : 0.059 Ohms
Continuous Drain Current : - 5.3 A


Features:

• 5.3 A, 30V RDS(ON) = 59 mΩ @ VGS = 10 V RDS(ON) = 92 mΩ @ VGS = 4.5 V
• VF < 0.35 V @ 1 A (TJ = 125°C) VF < 0.25 V @ 1 A (TJ = 25°C)
• Schottky and MOSFET incorporated into single power surface mount SO-8 package
• Electrically independent Schottky and MOSFET pinout for design flexibility



Pinout

  Connection Diagram


Specifications

Symbol
Parameter
Ratings
Units
VDSS
VGSS
MOSFET Drain-Source Voltage
MOSFET Gate-Source Voltage
30
±25
5.3
20
2
1.6
1
0.9
55 to +150
30
1
V
V
A

W



°C
V
A
ID
Drain Current Continuous
Pulsed
(Note 1a)
PD
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
TJ,TSTG Operating and Storage Junction Temperature Range

VRRM
IO

Schottky Repetitive Peak Reverse Voltage
Schottky Average Forward Current
(Note 1a)



Description

The FDFS2P103A combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package.

This FDFS2P103A device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low onstate resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies.




Parameters:

Technical/Catalog InformationFDFS2P103A
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C5.3A
Rds On (Max) @ Id, Vgs59 mOhm @ 5.3A, 10V
Input Capacitance (Ciss) @ Vds 535pF @ 15V
Power - Max900mW
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs8nC @ 5V
Package / Case8-SOIC
FET FeatureDiode (Isolated)
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDFS2P103A
FDFS2P103A
FDFS2P103ACT ND
FDFS2P103ACTND
FDFS2P103ACT



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