Gate-Source Breakdown Voltage
: +/- 20 V
Mounting Style
: SMD/SMT
Packaging
: Reel
Transistor Polarity
: P-Channel
Maximum Operating Temperature
: + 150 C
Resistance Drain-Source RDS (on)
: 0.11 Ohms
Drain-Source Breakdown Voltage
: - 60 V
Package / Case
: SOIC-8 Narrow
Continuous Drain Current
: - 3 A
Configuration
: Single Dual Drain
Features: • 3.0 A, 60V RDS(ON) = 110 mΩ @ VGS = 10 V RDS(ON) = 140 mΩ @ VGS = 4.5 V
• VF < 0.45 V @ 1 A (TJ = 125°C) VF < 0.53 V @ 1 A VF < 0.62 V @ 2 A
• Schottky and MOSFET incorporated into single power surface mount SO-8 package
• Electrically independent Schottky and MOSFET pinout for design flexibilityPinout
Specifications
|
Symbol |
Parameter |
Ratings |
Units |
|
VDSS
VGSS |
MOSFET Drain-Source Voltage
MOSFET Gate-Source Voltage |
60
±20
3
10
2
1.6
1
0.9
55 to +150
45
1 |
V
V
A
W
°C
V
A |
|
ID |
Drain Current Continuous
Pulsed |
(Note 1a) |
|
PD |
Power Dissipation for Dual Operation
Power Dissipation for Single Operation |
(Note 1a)
(Note 1b)
(Note 1c) |
| TJ,TSTG |
Operating and Storage Junction Temperature Range |
|
VRRM
IO |
Schottky Repetitive Peak Reverse Voltage
Schottky Average Forward Current |
(Note 1a) |
DescriptionThe FDFS2P106A combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package.
This FDFS2P106A device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low onstate resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies.
Parameters: | Technical/Catalog Information | FDFS2P106A |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 3A |
| Rds On (Max) @ Id, Vgs | 110 mOhm @ 3A, 10V |
| Input Capacitance (Ciss) @ Vds | 714pF @ 30V |
| Power - Max | 900mW |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 21nC @ 10V |
| Package / Case | 8-SOIC |
| FET Feature | Diode (Isolated) |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDFS2P106A
FDFS2P106A
FDFS2P106ATR ND
FDFS2P106ATRND
FDFS2P106ATR
|
FDFS2P106A Data Sheet
