FDG315N

MOSFET SC70-6 N-CH 30V

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SeekIC No. : 00145996 Detail

FDG315N: MOSFET SC70-6 N-CH 30V

floor Price/Ceiling Price

US $ .19~.3 / Piece | Get Latest Price
Part Number:
FDG315N
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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Upload time: 2024/3/28

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 2 A
Resistance Drain-Source RDS (on) : 0.1 Ohms Configuration : Single Quad Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SC-70-6 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Package / Case : SC-70-6
Configuration : Single Quad Drain
Continuous Drain Current : 2 A
Resistance Drain-Source RDS (on) : 0.1 Ohms


Features:

• 2 A, 30 V. RDS(ON) = 0.12 Ω @ VGS = 10 V RDS(ON) = 0.16 Ω @ VGS = 4.5 V.
• Low gate charge (2.1nC typical).
• High performance trench technology for extremely low RDS(ON).
• Compact industry standard SC70-6 surface mount package.



Application

• DC/DC converter
• Load switch
• Power Management



Pinout

  Connection Diagram


Specifications

Symbol
Parameter
Ratings
Units
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
30
±20
2
6
0.75
0.48
-55 to +150
V
V
A

W

°C
ID
Drain Current Continuous
Pulsed
(Note 1a)
PD
Maximum Power Dissipation (Note 1a)
(Note 1b)
TJ,TSTG Operating and Storage Junction Temperature Range



Description

This FDG315N N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

These FDG315N devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.




Parameters:

Technical/Catalog InformationFDG315N
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C2A
Rds On (Max) @ Id, Vgs120 mOhm @ 2A, 10V
Input Capacitance (Ciss) @ Vds 220pF @ 15V
Power - Max480mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs4nC @ 5V
Package / CaseSC-70-6, SC-88, SOT-323-6, SOT-363
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDG315N
FDG315N



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