FDG315N

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Package / Case : SC-70-6
Configuration : Single Quad Drain
Continuous Drain Current : 2 A
Resistance Drain-Source RDS (on) : 0.1 Ohms


Features:

• 2 A, 30 V. R_DS(ON) = 0.12 Ω @ V_GS = 10 V R_DS(ON) = 0.16 Ω @ V_GS = 4.5 V.
• Low gate charge (2.1nC typical).
• High performance trench technology for extremely low RDS(ON).
• Compact industry standard SC70-6 surface mount package.


Application

• DC/DC converter
• Load switch
• Power Management


Pinout




Specifications

Symbol	Parameter		Ratings	Units
VDSS VGSS	Drain-Source Voltage Gate-Source Voltage		30 ±20 2 6 0.75 0.48 -55 to +150	V V A W °C
ID	Drain Current Continuous Pulsed	(Note 1a)
PD	Maximum Power Dissipation	(Note 1a) (Note 1b)
TJ,TSTG	Operating and Storage Junction Temperature Range

Description

This FDG315N N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

These FDG315N devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Parameters:

Technical/Catalog Information	FDG315N
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	2A
Rds On (Max) @ Id, Vgs	120 mOhm @ 2A, 10V
Input Capacitance (Ciss) @ Vds	220pF @ 15V
Power - Max	480mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	4nC @ 5V
Package / Case	SC-70-6, SC-88, SOT-323-6, SOT-363
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDG315N FDG315N