FDG328P

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 1.5 A
Gate-Source Breakdown Voltage : +/- 12 V
Package / Case : SC-70-6
Configuration : Single Quad Drain
Resistance Drain-Source RDS (on) : 120 mOhms


Features:

• 1.5 A, 20 V. R_DS(ON) = 0.145 Ω @ V_GS = 4.5 V R_DS(ON) = 0.210 Ω @ V_GS = 2.5 V
• Low gate charge
• High performance trench technology for extremely low RDS(ON)
• Compact industry standard SC70-6 surface mount package


Application

• Load switch
• Power management
• DC/DC converter


Pinout

Specifications

Symbol	Parameter		Ratings	Units
VDSS VGSS	Drain-Source Voltage Gate-Source Voltage		20 ± 12 1.5 6 0.75 0.48 -55 to +150	V V A W °C
ID	Drain Current Continuous Pulsed	(Note 1a)
PD	Maximum Power Dissipation	(Note 1a) (Note 1b)
TJ,TSTG	Operating and Storage Junction Temperature Range

Description

This FDG328P P-Channel 2.5V specified MOSFET is produced in a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications for a wide range of gate drive voltages (2.5V 12V).

Parameters:

Technical/Catalog Information	FDG328P
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	1.5A
Rds On (Max) @ Id, Vgs	145 mOhm @ 1.5A, 4.5V
Input Capacitance (Ciss) @ Vds	337pF @ 10V
Power - Max	480mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	6nC @ 4.5V
Package / Case	SC-70-6, SC-88, SOT-323-6, SOT-363
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDG328P FDG328P