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MFG:FAIRCHILD
Part Number: FDG330P
MFG: FAIRCHILD
Description: This P-Channel 1.8V specified MOSFET uses Fairchild's advanced low voltage PowerTrench process. It has...
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FDG330P
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DataSheet
General Description
FDG330P General Description
This P-Channel 1.8V specified MOSFET uses Fairchild's advanced low voltage PowerTrench process. It has been optimized for battery power management applications.
FDG330P Maximum Ratings
|
Symbol |
Parameter |
Ratings |
Units | |
|
VDSS VGSS |
Drain-Source Voltage Gate-Source Voltage |
12 ± 8 2 6 0.75 0.48 55 to +150 |
V V A W °C | |
|
ID |
Drain Current Continuous Pulsed |
(Note 1a) | ||
|
PD |
Maximum Power Dissipation | (Note 1a) (Note 1b) | ||
| TJ,TSTG | Operating and Storage Junction Temperature Range | |||
FDG330P Features
• 2 A, 12 V. RDS(ON) = 110 mΩ @ VGS = 4.5 V RDS(ON) = 150 mΩ @ VGS = 2.5 V RDS(ON) = 215 mΩ @ VGS = 1.8 V
• Low gate charge
• High performance trench technology for extremely low RDS(ON)
• Compact industry standard SC70-6 surface mount package
• Low gate charge
• High performance trench technology for extremely low RDS(ON)
• Compact industry standard SC70-6 surface mount package
FDG330P Typical Application
• Battery management
• Load switch
• Load switch
FDG330P Connection Diagram
FDG330P
PDF/DataSheet Download
- Datasheet: FDG330P
- File Size: 153733 KB
- Manufacturer: FAIRCHILD [Fairchild Semiconductor]
- Click here to Download
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