FDG330P

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 8 V
Resistance Drain-Source RDS (on) : 0.11 Ohms
Drain-Source Breakdown Voltage : - 12 V
Package / Case : SC-70-6
Configuration : Single Quad Drain
Continuous Drain Current : 2 A


Features:

• 2 A, 12 V. R_DS(ON) = 110 mΩ @ V_GS = 4.5 V R_DS(ON) = 150 mΩ @ V_GS = 2.5 V R_DS(ON) = 215 mΩ @ V_GS = 1.8 V
• Low gate charge
• High performance trench technology for extremely low RDS(ON)
• Compact industry standard SC70-6 surface mount package


Application

• Battery management
• Load switch


Pinout




Specifications

Symbol	Parameter		Ratings	Units
VDSS VGSS	Drain-Source Voltage Gate-Source Voltage		12 ± 8 2 6 0.75 0.48 55 to +150	V V A W °C
ID	Drain Current Continuous Pulsed	(Note 1a)
PD	Maximum Power Dissipation	(Note 1a) (Note 1b)
TJ,TSTG	Operating and Storage Junction Temperature Range

Description

This FDG330P P-Channel 1.8V specified MOSFET uses Fairchild's advanced low voltage PowerTrench process. It has been optimized for battery power management applications.

Parameters:

Technical/Catalog Information	FDG330P
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	12V
Current - Continuous Drain (Id) @ 25° C	2A
Rds On (Max) @ Id, Vgs	110 mOhm @ 2A, 4.5V
Input Capacitance (Ciss) @ Vds	477pF @ 6V
Power - Max	480mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	7nC @ 4.5V
Package / Case	SC-70-6, SC-88, SOT-323-6, SOT-363
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDG330P FDG330P