MFG:FAIRCHILD Package Cooled:06+ D/C:SC70-6
MFG: FAIRCHILD
Package Cooled: 06+
D/C: SC70-6
Description: These N-Channel 100V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTren...
These N-Channel 100V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.
These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.
|
Symbol |
Parameter |
Ratings |
Units | |
|
VDSS VGSS |
Drain-Source Voltage Gate-Source Voltage |
100 ±20 0.6 2.0 0.42 0.38 −55 to +150 |
V V A W °C | |
|
ID |
Drain Current Continuous Pulsed |
(Note 1a) | ||
|
PD |
Maximum Power Dissipation | (Note 1a) (Note 1b) | ||
| TJ,TSTG | Operating and Storage Junction Temperature Range | |||
FDG361N
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