FDG361N

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 100 V
Maximum Operating Temperature : + 150 C
Package / Case : SC-70-6
Configuration : Single Quad Drain
Resistance Drain-Source RDS (on) : 370 mOhms
Continuous Drain Current : 0.6 A


Features:

• 0.6 A, 100 V. R_DS(ON)= 500 mΩ @ V_GS = 10 V R_DS(ON)= 550 mΩ @ V_GS = 6.0 V
• Low gate charge (3.7nC typical)
• Fast switching speed
• High performance trench technology for extremely low RDS(ON)


Application

• Load switch
• Battery protection
• Power management


Pinout




Specifications

Symbol	Parameter		Ratings	Units
VDSS VGSS	Drain-Source Voltage Gate-Source Voltage		100 ±20 0.6 2.0 0.42 0.38 −55 to +150	V V A W °C
ID	Drain Current Continuous Pulsed	(Note 1a)
PD	Maximum Power Dissipation	(Note 1a) (Note 1b)
TJ,TSTG	Operating and Storage Junction Temperature Range

Description

These FDG361N N-Channel 100V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.

These devices FDG361N have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.

Parameters:

Technical/Catalog Information	FDG361N
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	600mA
Rds On (Max) @ Id, Vgs	500 mOhm @ 600mA, 10V
Input Capacitance (Ciss) @ Vds	153pF @ 50V
Power - Max	380mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	5nC @ 10V
Package / Case	SC-70-6, SC-88, SOT-323-6, SOT-363
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDG361N FDG361N