MFG:NS Package Cooled:FAI D/C:05+
MFG: NS
Package Cooled: FAI
D/C: 05+
Description: These dual P-Channel logic level enhancement mode field effect transistors are produced using Fairchil...
These dual P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs.
|
Symbol |
Parameter |
Ratings |
Units |
|
VDSS VGSS |
Drain-Source Voltage Gate-Source Voltage |
-25 -8 -0.41 -1.5 0.3 -55 to 150 6.0 |
V V A W °C kV |
|
ID |
Drain Current Continuous Pulsed | ||
|
PD |
Power Dissipation for Single Operation | ||
|
TJ, TSTG |
Operating and Storage Junction Temperature Range | ||
|
ESD |
Electrostatic Discharge Rating MIL-STD-883D Human Body Model ( 100pF / 1500Ω ) |
| RJA | Thermal Resistance, Junction-to-Ambient (Note 1) | 415 | °C/W |
FDG6304P
PDF/DataSheet Download
MOSFET N-CH DUAL 25V SC70-6
These FDG6303N dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This de...
These FDG6302P dual P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This de...
MOSFET N-CH DUAL 25A SC70-6
These FDG6301N dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This de...
These FDG361N N-Channel 100V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. Th...
Price: 0.75-0.8 USD
60V fault protected, RS485/RS422 transceiver, fail safe receiver
Price: 6.8-12.8 USD
Pulsed Laser Diode, DIP-2, 30 W
Price: 0.3-0.4 USD
programmable controller, 100PCS/TUBE, 60 mA, Current transfer ratio, UL recognized
Price: 0.45-0.55 USD
CMOS 8-bit microcomputer, SOP-20, -1.0V to +7.0V, 25.0 mA, AT89C2051-24SC
Price: 0.001-5 USD
SMD, chip inductor, chip coil, high frequency monolithic type, Self Resonant Freq, 1.7GHz, 27nH
Price: 2.2-3.5 USD
FastFE Op Amps, SOP8, -100 dB
Price: 1-1.8 USD
High-performance, Low-power, AVR 8-bit Microcontroller, QFP, 2.7-5.5V
Price: 1.2-3 USD
microprocessor, HD63C09E, -0.3 to +7.0 V
Price: 120-170 USD
LCD display module, transmissive type F-STN, SP14Q002-C1, Hitachi Ltd
Price: 40-45 USD
power transistor module, high DC current gain, including free wheeling diode, insulated type, 75A
Price: 0.01-100 USD
large capacitance, aluminum electrolytic capacitor, 160 to 400V, Non solvent-proof type, 330uF
Price: 0.35-0.47 USD
advanced power MOSFET, SOP8, 2W, Low On-resistance
