FDG6304P

MOSFET SC70-6 P-CH -25V

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SeekIC No. : 00149450 Detail

FDG6304P: MOSFET SC70-6 P-CH -25V

floor Price/Ceiling Price

US $ .16~.28 / Piece | Get Latest Price
Part Number:
FDG6304P
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.28
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  • $.16
  • Processing time
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Upload time: 2024/3/27

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 25 V
Gate-Source Breakdown Voltage : - 8 V Continuous Drain Current : 0.41 A
Resistance Drain-Source RDS (on) : 1.1 Ohms Configuration : Dual
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SC-70-6 Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Configuration : Dual
Package / Case : SC-70-6
Drain-Source Breakdown Voltage : - 25 V
Gate-Source Breakdown Voltage : - 8 V
Resistance Drain-Source RDS (on) : 1.1 Ohms
Continuous Drain Current : 0.41 A


Features:

·-25 V, -0.41 A continuous, -1.5 A peak.
·RDS(ON) = 1.1 W @ VGS= -4.5 V,
·RDS(ON) = 1.5 W @ VGS= -2.7 V.
·Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) < 1.5 V).
·Gate-Source Zener for ESD ruggedness (>6kV Human Body Model).
·Compact industry standard SC70-6 surface mount package.



Pinout

  Connection Diagram


Specifications

Symbol
Parameter
Ratings
Units
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
-25
-8
-0.41
-1.5
0.3
-55 to 150
6.0
V
V

A

W
°C
kV
ID
Drain Current Continuous
Pulsed
PD
Power Dissipation for Single Operation
TJ, TSTG
Operating and Storage Junction Temperature Range

ESD

Electrostatic Discharge Rating MIL-STD-883D
Human Body Model ( 100pF / 1500Ω )

THERMAL CHARACTERISTICS
RJA Thermal Resistance, Junction-to-Ambient (Note 1) 415 °C/W



Description

These FDG6304P dual P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device FDG6304P has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs.




Parameters:

Technical/Catalog InformationFDG6304P
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 P-Channel (Dual)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25° C410mA
Rds On (Max) @ Id, Vgs1.1 Ohm @ 410mA, 4.5V
Input Capacitance (Ciss) @ Vds 62pF @ 10V
Power - Max300mW
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs1.5nC @ 4.5V
Package / CaseSC-70-6
FET Feature*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDG6304P
FDG6304P
FDG6304PCT ND
FDG6304PCTND
FDG6304PCT



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