MOSFET 25V Dual N-Ch Digital
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 25 V | ||
| Gate-Source Breakdown Voltage : | 8 V | Continuous Drain Current : | 0.5 A | ||
| Resistance Drain-Source RDS (on) : | 0.34 Ohms | Configuration : | Dual | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | SC-70-6 | Packaging : | Reel |

|
Symbol |
Parameter |
FDG6303N |
Units | |
|
VDSS VGSS |
Drain-Source Voltage Gate-Source Voltage |
25 0.5 1.5 0.3 -55 to 150 6.0 - 0.5 to +8 |
V V A W °C kV | |
|
ID |
Drain Current Continuous Pulsed | |||
|
PD |
Power Dissipation for Single Operation | (Note 1) | ||
| TJ,TSTG ESD |
Operating and Storage Junction Temperature Range Electrostatic Discharge Rating MIL-STD-883D Human Body Model (100pf/1500O) | |||
| RJA | Thermal Resistance, Junction-to-Ambient |
415 |
°C/W |
These FDG6313N dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs.
| Technical/Catalog Information | FDG6313N |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25° C | 500mA |
| Rds On (Max) @ Id, Vgs | 450 mOhm @ 500mA, 4.5V |
| Input Capacitance (Ciss) @ Vds | 50pF @ 10V |
| Power - Max | 300mW |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 2.3nC @ 4.5V |
| Package / Case | SC-70-6, SC-88, SOT-323-6, SOT-363 |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDG6313N FDG6313N |