FDG6318P

MOSFET Dual PCh Digital

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FDG6318P Picture
SeekIC No. : 00149036 Detail

FDG6318P: MOSFET Dual PCh Digital

floor Price/Ceiling Price

US $ .14~.32 / Piece | Get Latest Price
Part Number:
FDG6318P
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Processing time
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Upload time: 2024/4/23

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 20 V
Gate-Source Breakdown Voltage : +/- 12 V Continuous Drain Current : 0.5 A
Resistance Drain-Source RDS (on) : 780 mOhms Configuration : Dual
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SC-70-6 Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Maximum Operating Temperature : + 150 C
Configuration : Dual
Gate-Source Breakdown Voltage : +/- 12 V
Package / Case : SC-70-6
Continuous Drain Current : 0.5 A
Resistance Drain-Source RDS (on) : 780 mOhms


Features:

• 0.5 A, 20 V. RDS(ON) = 780 mΩ @ VGS = 4.5 V
                           RDS(ON) = 1200 mΩ @ VGS = 2.5 V
• Very low level gate drive requirements allowing direct operation in 3V circuits (VGS(th) < 1.5V).
• Compact industry standard SC70-6 surface mount package



Application

• Battery management


Specifications

Symbol
Parameter
Ratings
Units
VDSS Drain-Source Voltage
-20
V
VGS Gate-Source Voltage
±12
V
ID Drain Current Continuous (Note 1)
Pulsed
-0.5
A
-1.8
PD Power Dissipation for Single Operation (Note 1)
0.3
W
TJ, TSTG Operating and Storage Temperature
-55 to 175

Notes:
1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RJA is determined  by the user's board design. RJA = 415°C/W when mounted on a minimum pad .




Description

These FDG6318P dual P-Channel logic level enhancement mode MOSFET are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance. This device has been designed especially for low voltage  applications as a replacement for bipolar digital transistors and small signal MOSFETS.




Parameters:

Technical/Catalog InformationFDG6318P
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 P-Channel (Dual)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C500mA
Rds On (Max) @ Id, Vgs780 mOhm @ 500mA, 4.5V
Input Capacitance (Ciss) @ Vds 83pF @ 10V
Power - Max300mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs1.2nC @ 4.5V
Package / CaseSC-70-6, SC-88, SOT-323-6, SOT-363
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDG6318P
FDG6318P



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