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MFG:FAIRCHILD  Package Cooled:06+  D/C:SC70-6  

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Part Number: FDG6318PZ

 

MFG: FAIRCHILD

Package Cooled: 06+

D/C: SC70-6

Description: These dual P-Channel logic level enhancement mode MOSFET are produced using Fairchild Semiconductor's ...


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FDG6318PZ General Description


These dual P-Channel logic level enhancement mode MOSFET are produced using Fairchild Semiconductor's especially tailored to minimize on-state resistance. This device has been designed especially for bipolar digital transistors and small signal MOSFETS

FDG6318PZ Maximum Ratings

Symbol
Parameter
 Ratings
Units
VDSS
VGSS
 Drain-Source Voltage
Gate-Source Voltage
-20
±12
-0.5
-0.3
Figure 4
0.3
2.4
-55 to 150
1.4
V
V
A
A

W
mW/oC
oC
kV
ID
 Drain Current
Continuous (TC = 25oC, VGS = - 4.5V)
Continuous (TC = 100oC, VGS = - 2.5V) Pulsed
PD
 Power dissipation
Derate above 25°C
TJ, TSTG
 Operating and Storage Junction Temperature Range

ESD

 Electrostatic Discharge Rating MIL-STD-883D
Human Body Model ( 100pF / 1500Ω )

FDG6318PZ Features

• -0.5A, -20V. rDS(ON) = 780mΩ (Max)@ VGS = -4.5 V rDS(ON) = 1200mΩ (Max) @ VGS = -2.5 V
• Very low level gate drive requirements allowing direct operation in 3V circuits (VGS(TH) < 1.5V).
• Gate-Source Zener for ESD ruggedness (>1.4kV Human Body Model).
• Compact industry standard SC-70-6 surface mount package.

FDG6318PZ Connection Diagram

FDG6318PZ Connection Diagram

FDG6318PZ datasheet

FDG6318PZ
PDF/DataSheet Download

  • Datasheet: FDG6318PZ
  • File Size: 222944 KB
  • Manufacturer: FAIRCHILD [Fairchild Semiconductor]
  • Click here to Download

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