MFG:fsc Package Cooled:DUAL N&P CHANNEL DIGITAL FET D/C:07+
MFG: fsc
Package Cooled: DUAL N&P CHANNEL DIGITAL FET
D/C: 07+
Description: These dual N & P-Channel logic level enhancement mode field effect transistors are produced using ...
These dual N & P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETS. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.
|
Symbol |
Parameter |
N-Channel |
P-Channel |
Units | |
|
VDSS VGSS |
Drain-Source Voltage Gate-Source Voltage |
25 8 0.5 1.5 |
-25 -8 -0.41 -1.2 |
V V A W °C kV | |
|
ID |
Drain Current - Continuous - Pulsed | ||||
|
PD |
Power Dissipation for Single Operation | (Note 1) |
0.3 -55 to 150 6 | ||
| TJ,TSTG ESD |
Operating and Storage Temperature Ranger Electrostatic Discharge Rating MIL-STD-883D Human Body Model (100pf / 1500 Ohm) | ||||
FDG6321C
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MOSFET N/P-CH DUAL 25V SC70-6
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