FDJ1032C

MOSFET SC75 FLMP COMPLEMENTARY POWER

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SeekIC No. : 00160224 Detail

FDJ1032C: MOSFET SC75 FLMP COMPLEMENTARY POWER

floor Price/Ceiling Price

Part Number:
FDJ1032C
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/24

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Product Details

Quick Details

Transistor Polarity : N and P-Channel Drain-Source Breakdown Voltage : +/- 20 V
Gate-Source Breakdown Voltage : +/- 8 V Continuous Drain Current : 3.2 A
Resistance Drain-Source RDS (on) : 108 m Ohms Configuration : Dual Dual Source
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SC-75-6 Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 8 V
Transistor Polarity : N and P-Channel
Continuous Drain Current : 3.2 A
Drain-Source Breakdown Voltage : +/- 20 V
Package / Case : SC-75-6
Configuration : Dual Dual Source
Resistance Drain-Source RDS (on) : 108 m Ohms


Features:

`Q12.8 A, 20 V.  RDS(ON)= 160 m@ VGS= 4.5 V
                                 RDS(ON)= 230 m@ VGS= 2.5 V
                                 RDS(ON)= 390 m@ VGS= 1.8 V

`Q23.2 A, 20 V.        RDS(ON)= 90 m@ VGS= 4.5 V
                                 RDS(ON)= 130 m@ VGS= 2.5 V
`Low gate charge
`High performance trench technology for extremely lowRDS(ON)
`FLMP SC75 package: Enhanced thermal performance in industry-standard package size







Application

·DC/DC converter
·Load switch
·Motor Driving



Specifications

Symbol
Parameter
Q1
Q2
Units
VDSS
Drain-Source Voltage
20
20
V
VGSS
Gate-Source Voltage
±8
±12
V
ID
Drain Current Continuous (Note 1a)
Pulsed
2.8
3.2
A
12
13
PD
Power Dissipation for Single Operation (Note 1a)
(Note 1b)

1.5
W
0.9
TJ, TSTG


Operating and Storage Junction Temperature Range
55 to +150
°C
Thermal Characteristics
RJA

Thermal Resistance, Junction-to-Ambient (Note 1a)
80
°C/W
RJC

Thermal Resistance, Junction-to-Case (Note 1a)
5



Description

These FDJ1032C N & P-Channel MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

These devices FDJ1032C are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.




Parameters:

Technical/Catalog InformationFDJ1032C
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN and P-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C3.2A, 2.8A
Rds On (Max) @ Id, Vgs90 mOhm @ 3.2A, 4.5V
Input Capacitance (Ciss) @ Vds 200pF @ 10V
Power - Max900mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs3nC @ 4.5V
Package / CaseSC75-6 FLMP
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDJ1032C
FDJ1032C



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