FDJ1028N

MOSFET 20V N-Ch 2.5Vgs Spec PowerTrench MOSFET

product image

FDJ1028N Picture
SeekIC No. : 00162810 Detail

FDJ1028N: MOSFET 20V N-Ch 2.5Vgs Spec PowerTrench MOSFET

floor Price/Ceiling Price

Part Number:
FDJ1028N
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/3/28

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 12 V Continuous Drain Current : 3.2 A
Resistance Drain-Source RDS (on) : 90 mOhms at 4.5 V Configuration : Dual Dual Source
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SC-75-6 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 12 V
Continuous Drain Current : 3.2 A
Package / Case : SC-75-6
Resistance Drain-Source RDS (on) : 90 mOhms at 4.5 V
Configuration : Dual Dual Source


Features:

`3.2 A, 20 V. RDS(ON)= 90 m@ VGS= 4.5 V
                      RDS(ON)=130m@ VGS= 2.5 V
`Low gate charge
`High performance trench technology for extremely lowRDS(ON)
`FLMP SC75 package: Enhanced thermal performance in industry-standard package size



Application

·Battery management


Specifications

Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
20
V
VGSS
Gate-Source Voltage
±12
V
ID
Drain Current Continuous (Note 1a) Pulsed
3.2
A
12
PD
Power Dissipation for single Operation (Note 1a)
1.5
W
TJ,TSTG


Operating and Storage Junction Temperature Range
55 to+150
°C
Thermal Characteristics
RJA

Thermal Resistance, Junction-to-Ambient (Note 1a)
80
°C/W
RJC

Thermal Resistance, Junction-to-Case
5



Description

This FDJ1028N dual N-Channel 2.5V specified MOSFET uses Fairchild's advanced low voltage PowerTrench process. Packaged in FLMP SC75, the RDS(ON)and thermal properties of the device are optimized for battery power management applications.




Parameters:

Technical/Catalog InformationFDJ1028N
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 N-Channel (Dual)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C3.2A
Rds On (Max) @ Id, Vgs90 mOhm @ 3.2A, 4.5V
Input Capacitance (Ciss) @ Vds 200pF @ 10V
Power - Max1.5W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs3nC @ 4.5V
Package / CaseSC-75-6
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDJ1028N
FDJ1028N



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Industrial Controls, Meters
Boxes, Enclosures, Racks
Motors, Solenoids, Driver Boards/Modules
View more