FDJ1028N

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 12 V
Continuous Drain Current : 3.2 A
Package / Case : SC-75-6
Resistance Drain-Source RDS (on) : 90 mOhms at 4.5 V
Configuration : Dual Dual Source


Features:

`3.2 A, 20 V. RDS(ON)= 90 m@ VGS= 4.5 V
                      RDS(ON)=130m@ VGS= 2.5 V
`Low gate charge
`High performance trench technology for extremely lowRDS(ON)
`FLMP SC75 package: Enhanced thermal performance in industry-standard package size


Application

·Battery management


Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	20	V
VGSS	Gate-Source Voltage	±12	V
ID	Drain Current Continuous (Note 1a) Pulsed	3.2	A
		12
PD	Power Dissipation for single Operation (Note 1a)	1.5	W
TJ,TSTG	Operating and Storage Junction Temperature Range	55 to+150	°C
Thermal Characteristics
RJA	Thermal Resistance, Junction-to-Ambient (Note 1a)	80	°C/W
RJC	Thermal Resistance, Junction-to-Case	5

Description

This FDJ1028N dual N-Channel 2.5V specified MOSFET uses Fairchild's advanced low voltage PowerTrench process. Packaged in FLMP SC75, the R_DS(ON)and thermal properties of the device are optimized for battery power management applications.

Parameters:

Technical/Catalog Information	FDJ1028N
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 N-Channel (Dual)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	3.2A
Rds On (Max) @ Id, Vgs	90 mOhm @ 3.2A, 4.5V
Input Capacitance (Ciss) @ Vds	200pF @ 10V
Power - Max	1.5W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	3nC @ 4.5V
Package / Case	SC-75-6
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDJ1028N FDJ1028N