FDJ127P

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 8 V
Package / Case : SC-75-6
Continuous Drain Current : 4.1 A
Configuration : Single Quint Source
Resistance Drain-Source RDS (on) : 0.060 Ohms


Features:

• 4.1 A, 20 V. R_DS(ON) = 60 m @ VGS = 4.5 V
                           R_DS(ON) = 85 m @ VGS = 2.5 V
                           R_DS(ON) = 133 m @ VGS = 1.8 V
• Low gate charge
• High performance trench technology for extremely low RDS(ON)
• Compact industry standard SC75-6 surface mount package


Application

• Battery management
• Load switch


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	-20	V
VGSS	Gate-Source Voltage	± 8	V
ID	Drain Current Continuous (Note 1a) Pulsed	4.1	A
		-16
PD	Power Dissipation (Note 1)	1.6	W
TJ,TSTG	Operating and Storage Junction Temperature Range	55to+150	°C

Description

This FDJ127P P-Channel -1.8V specified MOSFET uses Fairchild's advanced low voltage Power Trench process. It has been optimized for battery power management applications.


Parameters:

Technical/Catalog Information	FDJ127P
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	4.1A
Rds On (Max) @ Id, Vgs	60 mOhm @ 4.1A, 4.5V
Input Capacitance (Ciss) @ Vds	780pF @ 10V
Power - Max	1.6W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	10nC @ 4.5V
Package / Case	SC-75-6
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDJ127P FDJ127P