FDJ1027P

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 8 V
Continuous Drain Current : 2.8 A
Package / Case : SC-75-6
Configuration : Dual Dual Source
Resistance Drain-Source RDS (on) : 160 mOhms at 4.5 V


Features:

• 2.8 A, 20 V R_DS(ON) = 160 m @ VGS = 4.5 V
                          R_DS(ON) = 230 m @ VGS = 2.5 V
                          R_DS(ON) = 390 m @ VGS = 1.8 V
• Low gate charge, High Power and Current handling capability
• High performance trench technology for extremely low RDS(ON)
• FLMP SC75 package: Enhanced thermal performance in industry-standard package size


Application

• Battery management/Charger Application
• Load switch


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	-20	V
VGSS	Gate-Source Voltage	± 8	V
ID PD	Drain Current Continuous (Note 1a) Pulsed	2.8	A
		12
	Power Dissipation for Single Operation (Note 1a) (Note 1b)	1.5
		0.9
TJ,TSTG	Operating and Storage Junction Temperature Range	55to+150	°C

Description

This FDJ1027P dual P-Channel 1.8V specified MOSFET uses Fairchild's advanced low voltage PowerTrench process. Packaged in FLMP SC75, the R_DS(ON) and thermal properties of the device are optimized for battery power management applications.


Parameters:

Technical/Catalog Information	FDJ1027P
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 P-Channel (Dual)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	2.8A
Rds On (Max) @ Id, Vgs	160 mOhm @ 2.8A, 4.5V
Input Capacitance (Ciss) @ Vds	290pF @ 10V
Power - Max	900mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	4nC @ 4.5V
Package / Case	SC-75
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDJ1027P FDJ1027P