FDJ129P

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 12 V
Package / Case : SC-75-6
Resistance Drain-Source RDS (on) : 0.07 Ohms
Continuous Drain Current : 4.2 A
Configuration : Single Quint Source


Features:

• 4.2 A, 20 V. RDS(ON) = 70 m @ VGS = 4.5 V
                           RDS(ON) = 120 m @ VGS = 2.5 V
• Low gate charge
• High performance trench technology for extremely low RDS(ON)
• Compact industry standard SC75-6 surface mount package


Application

• Battery management
• Load switch


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	-20	V
VGSS	Gate-Source Voltage	± 12	V
ID	Drain Current Continuous (Note 1a) Pulsed	4.2	A
		16
PD	Power Dissipation for Single Operation (Note 1a)	1.6	W
TJ,TSTG	Operating and Storage Junction Temperature Range	55to+150	°C

Description

This FDJ129P P-Channel -2.5V specified MOSFET uses Fairchild's advanced low voltage PowerTrench process. It has been optimized for battery power management applications.


Parameters:

Technical/Catalog Information	FDJ129P
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	4.2A
Rds On (Max) @ Id, Vgs	70 mOhm @ 4.2A, 4.5V
Input Capacitance (Ciss) @ Vds	780pF @ 10V
Power - Max	1.6W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	6nC @ 4.5V
Package / Case	SC-75-6
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDJ129P FDJ129P FDJ129PCT ND FDJ129PCTND FDJ129PCT