FDJ128N

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Continuous Drain Current : 5.5 A
Gate-Source Breakdown Voltage : +/- 12 V
Package / Case : SC-75-6
Configuration : Single Quint Source
Resistance Drain-Source RDS (on) : 0.035 Ohms


Features:

• 5.5 A, 20 V. RDS(ON) = 35 m @ VGS = 4.5 V
                      RDS(ON) = 51 m @ VGS = 2.5 V
• Low gate charge
• High performance trench technology for extremely low RDS(ON)
• Compact industry standard SC75-6 surface mount package

Application

• Battery management


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	20	V
VGSS	Gate-Source Voltage	± 12	V
ID	Drain Current Continuous (Note 1a) Pulsed	5.5	A
		16
PD	Power Dissipation for Single Operation (Note 1a)	1.6	W
TJ,TSTG	Operating and Storage Junction Temperature Range	55to+150	°C

Description

This FDJ128N N-Channel -2.5V specified MOSFET uses Fairchild's advanced low voltage PowerTrench process. It has been optimized for battery power management applications.


Parameters:

Technical/Catalog Information	FDJ128N
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	5.5A
Rds On (Max) @ Id, Vgs	35 mOhm @ 5.5A, 4.5V
Input Capacitance (Ciss) @ Vds	543pF @ 10V
Power - Max	1.6W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	8nC @ 5V
Package / Case	SC-75-6
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDJ128N FDJ128N FDJ128NDKR ND FDJ128NDKRND FDJ128NDKR