MOSFET -20V P-Ch 1.8V Lgic Lvl PT MOSFET
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 20 V | ||
Gate-Source Breakdown Voltage : | +/- 8 V | Continuous Drain Current : | - 6.4 A | ||
Resistance Drain-Source RDS (on) : | 35 mOhms | Configuration : | Single Hex Drain | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | MicroFET-8 | Packaging : | Reel |
Technical/Catalog Information | FDMB668P |
Vendor | Fairchild Semiconductor (VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | P-Channel |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25° C | 6.1A |
Rds On (Max) @ Id, Vgs | 35 mOhm @ 6.1A, 4.5V |
Input Capacitance (Ciss) @ Vds | 2085pF @ 10V |
Power - Max | 800mW |
Packaging | Cut Tape (CT) |
Gate Charge (Qg) @ Vgs | 59nC @ 10V |
Package / Case | MicroFET-8 |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FDMB668P FDMB668P FDMB668PCT ND FDMB668PCTND FDMB668PCT |