FDMB668P

MOSFET -20V P-Ch 1.8V Lgic Lvl PT MOSFET

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FDMB668P: MOSFET -20V P-Ch 1.8V Lgic Lvl PT MOSFET

floor Price/Ceiling Price

US $ .27~.46 / Piece | Get Latest Price
Part Number:
FDMB668P
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.46
  • $.36
  • $.31
  • $.27
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 20 V
Gate-Source Breakdown Voltage : +/- 8 V Continuous Drain Current : - 6.4 A
Resistance Drain-Source RDS (on) : 35 mOhms Configuration : Single Hex Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : MicroFET-8 Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 8 V
Resistance Drain-Source RDS (on) : 35 mOhms
Configuration : Single Hex Drain
Package / Case : MicroFET-8
Continuous Drain Current : - 6.4 A


Parameters:

Technical/Catalog InformationFDMB668P
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C6.1A
Rds On (Max) @ Id, Vgs35 mOhm @ 6.1A, 4.5V
Input Capacitance (Ciss) @ Vds 2085pF @ 10V
Power - Max800mW
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs59nC @ 10V
Package / CaseMicroFET-8
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDMB668P
FDMB668P
FDMB668PCT ND
FDMB668PCTND
FDMB668PCT



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