MOSFET SINGLE PCH TRENCH MOSFET
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| Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 30 V | ||
| Gate-Source Breakdown Voltage : | +/- 25 V | Continuous Drain Current : | 1.3 A | ||
| Resistance Drain-Source RDS (on) : | 0.18 Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | SuperSOT | Packaging : | Reel |
|
Symbol |
Parameter |
Ratings |
Units |
|
VDSS |
Drain-Source Voltage |
-30 |
V |
|
VGSS |
Gate-Source Voltage |
±25 |
V |
|
ID |
Drain Current - Continuous (Note |
-1.3 |
A |
|
-10 | |||
|
PD |
Power Dissipation for Single Operation (Note |
0.5 |
W |
|
0.46 | |||
|
TJ, Tstg |
Operating and |
-55 to +150 |
|
| Technical/Catalog Information | FDN352AP |
| Vendor | Fairchild Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 1.3A |
| Rds On (Max) @ Id, Vgs | 180 mOhm @ 1.3A, 10V |
| Input Capacitance (Ciss) @ Vds | 150pF @ 15V |
| Power - Max | 460mW |
| Packaging | Cut Tape (CT) |
| Gate Charge (Qg) @ Vgs | 1.9nC @ 4.5V |
| Package / Case | SuperSOT?-3 |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDN352AP FDN352AP FDN352APCT ND FDN352APCTND FDN352APCT |