FDN361BN, US $ .16-.31 , Fairchild Semiconductor, FDN361BN DataSheet download, circuit diagram from SeekIC.com

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FDN361BN: MOSFET 30V N-Ch LogicLevel PowerTrench MOSFET

FDN361BN Data Sheet

US $ .16~.31 / Piece | Get Latest Price

Part Number:: FDN361BN
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	30 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	1.4 A
Resistance Drain-Source RDS (on) :	110 mOhms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	SuperSOT	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 1.4 A
Package / Case : SuperSOT
Resistance Drain-Source RDS (on) : 110 mOhms

Parameters:

Technical/Catalog Information	FDN361BN
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	1.4A
Rds On (Max) @ Id, Vgs	110 mOhm @ 1.4A, 10V
Input Capacitance (Ciss) @ Vds	193pF @ 15V
Power - Max	460mW
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	1.8nC @ 4.5V
Package / Case	SuperSOT?-3
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDN361BN FDN361BN FDN361BNCT ND FDN361BNCTND FDN361BNCT

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FDN361BN

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