FDP2532

MOSFET 150V NCh UltraFET Power Trench

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SeekIC No. : 00150373 Detail

FDP2532: MOSFET 150V NCh UltraFET Power Trench

floor Price/Ceiling Price

US $ 1.42~2.14 / Piece | Get Latest Price
Part Number:
FDP2532
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $2.14
  • $1.91
  • $1.57
  • $1.42
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/19

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 150 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 79 A
Resistance Drain-Source RDS (on) : 16 m Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 150 V
Continuous Drain Current : 79 A
Resistance Drain-Source RDS (on) : 16 m Ohms


Features:

*rDS(ON) = 14m(Typ.), VGS = 10V, ID = 33A
*Qg (tot) = 82nC (Typ.), VGS= 10V
*Low Miller Charge
*Low QRR Body Diode
*UIS Capability (Single Pulse and Repetitive Pulse)
*Qualified to AEC Q101
Formerly developmental type 82884





Application

* DC/DC converters and Off-Line UPS
* Distributed Power Architectures and VRMs
* Primary Switch for 24V and 48V Systems
* High Voltage Synchronous Rectifier
* Direct Injection / Diesel Injection Systems
* 42V Automotive Load Control
* Electronic Valve Train Systems





Specifications

Symbol Parameter Ratings Units
VDSS Drain to Source Voltage 150
V
VGS
Gate to Source Voltage
±20
V
ID
Drain Current
Continuous (TC= 25, VGS = 10V)
79 A
Continuous (TC = 100, VGS = 10V) 56 A
Continuous (Tamb = 25, VGS = 10V, RJA = 43/W) 8 A
Pulsed Figure 4 A
EAS
Single Pulse Avalanche Energy (Note 1) 400 mJ
PD
Power dissipation 310 W
Derate above 25 2.07 W/
TJ, TSTG
Operating and Storage Temperature -55 to 175




Product Product status Eco Status Pricing* Package type Leads Packing method Package Drawing Package Marking Convention**
FDP2532 Full Production RoHS Compliant $4.40 TO-220 3 RAIL TA03D Line 1: $Y (Fairchild logo)
&Z (Asm. Plant Code)
&3 (3-Digit Date Code)
&K Line 2: FDP2532
* Fairchild 1,000 piece Budgetary Pricing
** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples

Package marking information for product FDP2532 is available. Click here for more information .





Parameters:

Technical/Catalog InformationFDP2532
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25° C79A
Rds On (Max) @ Id, Vgs16 mOhm @ 33A, 10V
Input Capacitance (Ciss) @ Vds 5870pF @ 25V
Power - Max310W
PackagingTube
Gate Charge (Qg) @ Vgs107nC @ 10V
Package / CaseTO-220AB
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDP2532
FDP2532



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