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FDP2552

MOSFET 150V N-Ch UltraFET Trench

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SeekIC No. : 00153660 Detail

FDP2552: MOSFET 150V N-Ch UltraFET Trench

FDP2552 Data Sheet

floor Price/Ceiling Price

US $ .98~1.52 / Piece | Get Latest Price
Part Number:
FDP2552
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $1.52
  • $1.38
  • $1.11
  • $.98
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/23

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 150 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 37 A
Resistance Drain-Source RDS (on) : 0.032 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 150 V
Continuous Drain Current : 37 A
Resistance Drain-Source RDS (on) : 0.032 Ohms


Features:

*rDS(ON)  = 32m (Typ.), VGS = 10V, ID = 16A 
*Qg (tot) = 39nC (Typ.), VGS = 10V
* Low Miller Charge
*Low QRR Body Diode
* UIS Capability (Single Pulse and Repetitive Pulse)
* Qualified to AEC Q101
  Formerly developmental type 82869


Application

* DC/DC Converters and Off-line UPS
* Distributed Power Architectures and VRMs
* Primary Switch for 24V and 48V Systems
* High Voltage Synchronous Rectifier
* Direct Injection / Diesel Injection Systems
* 42V Automotive Load Control
* Electronic Valve Train Systems


Specifications

Symbol Parameter Ratings Units
VDSS
 Drain to Source Voltage 150
 V
VGS
 Gate to Source Voltage ±20 V
ID
 Drain Current
Continuous (TC = 25, VGS = 10V) 		 37 A
Continuous (TC = 100, VGS = 10V) 26 A
Continuous (Tamb = 25, VGS = 10V) with RJA = 43/W 5 A
Pulsed Figure 4 A
EAS
 Single Pulse Avalanche Energy (Note 1) 390 mJ
PD
 Power dissipation 150 W
Derate above 25 1.0
W/
TJ , TSTG
 		 Operating and Storage Temperature -55 to 175



Parameters:

Technical/Catalog InformationFDP2552
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25° C37A
Rds On (Max) @ Id, Vgs36 mOhm @ 16A, 10V
Input Capacitance (Ciss) @ Vds 2800pF @ 25V
Power - Max150W
PackagingTube
Gate Charge (Qg) @ Vgs51nC @ 10V
Package / CaseTO-220AB
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDP2552
FDP2552



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