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FDP2572

MOSFET TO-220 N-CH 150V 29A

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SeekIC No. : 00147932 Detail

FDP2572: MOSFET TO-220 N-CH 150V 29A

FDP2572 Data Sheet

floor Price/Ceiling Price

US $ .58~.94 / Piece | Get Latest Price
Part Number:
FDP2572
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.94
  • $.85
  • $.73
  • $.58
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 150 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 29 A
Resistance Drain-Source RDS (on) : 0.054 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 150 V
Continuous Drain Current : 29 A
Resistance Drain-Source RDS (on) : 0.054 Ohms


Features:

• rDS(ON)= 45mΩ (Typ.), VGS = 10V, ID = 9A
• Qg(tot) = 26nC (Typ.), VGS = 10V
• Low Miller Charge
• Low QRR Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101


Application

• DC/DC converters and Off-Line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V Systems
• High Voltage Synchronous Rectifier
• Direct Injection / Diesel Injection Systems
• 42V Automotive Load Control
• Electronic Valve Train Systems


Specifications

Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
150
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current
Continuous (TC = 25, VGS = 10V)
        29
A
Continuous (TC = 100, VGS = 10V)
20
A
Continuous (Tamb = 25, VGS = 10V, RJA = 43/W)
4
A
Pulsed
Figure 4
A
EAS
Single Pulse Avalanche Energy (Note 1)
36
mJ
PD
Power dissipation
135
W
Derate above 25
0.9
W/°C
TJ, Tstg
Operating and Storage Temperature
-55 to +175
°C



Parameters:

Technical/Catalog InformationFDP2572
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25° C29A
Rds On (Max) @ Id, Vgs54 mOhm @ 9A, 10V
Input Capacitance (Ciss) @ Vds 1770pF @ 25V
Power - Max135W
PackagingTube
Gate Charge (Qg) @ Vgs34nC @ 10V
Package / CaseTO-220AB
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDP2572
FDP2572



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