FDP2670

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 200 V
Continuous Drain Current : 19 A
Resistance Drain-Source RDS (on) : 0.13 Ohms


Features:

*  19 A, 200 V. R_DS(ON) = 130 m @ V_GS = 10 V
*  Low gate charge (27 nC typical)
* Fast switching speed
*  High performance trench technology for extremely low RDS(ON)
*  High power and current handling capability


Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	200	V
VGSS	Gate-Source Voltage	± 20	V
ID	Drain Current Continuous (Note 1)                       Pulsed (Note 1)	19	A A
		40
PD	Total Power Dissipation @ TC = 25 Derate above 25	93	W
		0.63	W°/C
dv/dt	Peak Diode Recovery dv/dt (Note 3)	3.2	V/ns
TJ, TSTG	Operating and Storage Junction Temperature Range	65 to +175

Description

  This FDP2670 N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application.  Any application requiring a 200V MOSFETs with low on-resistance and fast switching will benefit.

  These FDP2670 MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.

  The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

Parameters:

Technical/Catalog Information	FDP2670
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	19A
Rds On (Max) @ Id, Vgs	130 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds	1320pF @ 100V
Power - Max	93W
Packaging	Tube
Gate Charge (Qg) @ Vgs	38nC @ 10V
Package / Case	TO-220AB
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDP2670 FDP2670