FDP6035L

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220
Continuous Drain Current : 58 A
Resistance Drain-Source RDS (on) : 0.011 Ohms


Features:

*58 A, 30 V. R_DS(ON)   = 0.011 @ V_GS =10 V          
                    R_DS(ON)  = 0.019 @ V_GS =4.5 V.      
*Low  gate charge (typical 34 nC).
*Low Crss (typical 175 pF).
*Fast switching speed.


Specifications

Symbol	Parameter	FDP6035L	FDB6035L	Units
VDSS	Drain-Source Voltage	30		V
VGSS	Gate-Source Voltage	±20		V
ID	Drain Current - Continuous - Pulsed	58		A
		175
PD	Maximum Power Dissipation @ TC = 25 Derate above 25	75		W
		0.5		W/
TJ, TSTG	Operating and Storage Temperature Range	-65 to 175

Description

  These FDP6035L N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices FDP6035L are particularly suited for low voltage applications such as DC/DC converters and high efficiency switching circuits where fast switching, low in-line power loss, and resistance to transients are needed.