FDP61N20

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 30 V
Resistance Drain-Source RDS (on) : 0.041 Ohms
Continuous Drain Current : 61 A


Features:

* 61A, 200V, R _DS(on)  = 0.041W @V_GS  = 10 V
* Low gate charge ( typical 58 nC)
* Low C_rss  ( typical  80 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability


Specifications

Symbol	Parameter	FDP61N20	Unit
VDSS	Drain-Source Voltage	200	V
ID	Drain Current - Continuous (TC = 25)                      - Continuous (TC = 100)	61 38.5	A A
IDM	Drain Current Pulsed                (Note 1)	244	A
VGSS	Gate-Source voltage	±30	V
EAS	Single Pulsed Avalanche Energy (Note 2)	1440	mJ
IAR	I Avalanche Current                    (Note 1)	61	A
EAR	Repetitive Avalanche Energy       (Note 1)	41.7	mJ
dv/dt	Peak Diode Recovery dv/dt          (Note 3)	4.5	V/ns
PD	Power Dissipation (TC = 25)               - Derate above 25	417 3.3	W W/
TJ,TSTG	Operating and Storage Temperature Range	-55to+150
TL	Maximum Lead Temperature for Soldering Purpose,1/8" from Case for 5 Seconds	300

Description

These FDP61N20 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe,DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices FDP61N20 are well suited for high efficient switched mode power supplies and active power factor correction.


Parameters:

Technical/Catalog Information	FDP61N20
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	61A
Rds On (Max) @ Id, Vgs	41 mOhm @ 30.5A, 10V
Input Capacitance (Ciss) @ Vds	3380pF @ 25V
Power - Max	417W
Packaging	Tube
Gate Charge (Qg) @ Vgs	75nC @ 10V
Package / Case	TO-220
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDP61N20 FDP61N20