FDP6670AL

MOSFET N-Ch PowerTrench Logic Level

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SeekIC No. : 00159555 Detail

FDP6670AL: MOSFET N-Ch PowerTrench Logic Level

floor Price/Ceiling Price

Part Number:
FDP6670AL
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 6.5 m Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 6.5 m Ohms


Features:

*80 A, 30 V RDS(ON) = 6.5 m @ VGS = 10 V
                   RDS(ON) = 8.5 m @ VGS = 4.5 V
*Critical DC electrical parameters specified at elevated temperature
*High performance trench technology for extremely low RDS(ON)
*175 maximum junction temperature rating



Specifications

Symbol Parameter Ratings Units
VDSS Drain-Source Voltage
30 V

VGSS
Gate-Source Voltage
±20
V
ID Drain Current Continuous (Note 1)
Pulsed (Note 1)
80
A
240
PD Total Power Dissipation @ TC = 25
Derate above 25
68 W

0.45
W/
TJ, TSTG Operating and Storage Junction Temperature Range 65 to +175



Description

  This FDP6670AL N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

  These  FDP6670AL MOSFETs feature faster switching and lower gate charge than other  MOSFETs with comparable RDS(ON) specifications.

  The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

  FDP6670AL has been optimized for low gate charge, low RDS(ON) and fast switching speed.




Parameters:

Technical/Catalog InformationFDP6670AL
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C80A
Rds On (Max) @ Id, Vgs6.5 mOhm @ 40A, 10V
Input Capacitance (Ciss) @ Vds 2440pF @ 15V
Power - Max68W
PackagingTube
Gate Charge (Qg) @ Vgs33nC @ 5V
Package / CaseTO-220
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDP6670AL
FDP6670AL



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