FDP6670S

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220
Resistance Drain-Source RDS (on) : 0.0085 Ohms
Continuous Drain Current : 0.041 A


Features:

·  31 A, 30 V.   R _DS(ON)=  8.5 mW @ V_GS = 10 V 
                         R _DS(ON)=12.5 mW @ V_GS = 4.5 V
·  Includes SyncFET Schottky body diode  
·  Low gate charge (23nC typical)
·  High performance trench technology for extremely low RDS(ON)  and fast switching
·  High power and current handling capability 


Specifications

Symbol	Parameter	FDP5645	FDB5645	Units
VDSS	Drain-Source Voltage	30		V
VGSS	Gate-Source Voltage	± 20		V
ID	Drain Current - Continuous    (Note 1)                        - Pulsed            (Note 1)	62		A
		150
PD	Total Power Dissipation @ TC =25                                 Derate above 25	62.5		W
		0.5		W/
TJ, Tstg	Operating and Storage Temperature Range	55 to +150
TL	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	275

Description

This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies.  This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON)  and low gate charge.  The FDP6670S includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology.   The performance of the FDP6670S/FDB6670S as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDP6670A/FDB6670A in parallel with a Schottky diode.