FDP8870

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Resistance Drain-Source RDS (on) : 0.0041 Ohms
Continuous Drain Current : 156 A


Features:

* r _DS(ON) = 4.1mW , V_GS= 10V, I_D = 35A
* r _DS(ON) = 4.6mW, V_GS = 4.5V, I_D = 35A
* High performance trench technology for extremely low r _DS(ON)
* Low gate charge
* High power and current handling capability


Application

* DC/DC converters


Specifications

 

Symbol	Parameter	Ratings	Units
VDSS	Drain to Source Voltage	30	V
VGS	Gate to Source Voltage	±20	V
ID	Drain Current	156	A
	Continuous (TC = 25 , VGS = 10V)
	Continuous (TC = 100 , VGS = 10V)	147	A
	Continuous (Tamb = 25 , VGS = 10V, RJA = 62 /W)	19	A
	Pulsed	Figure 4	A
EAS	Single Pulse Avalanche Energy (Note 1)	300	mJ
PD	Power dissipation	160	W
	Derate above 25	1.07	W/
TJ , TSTG	Operating and Storage Temperature	-55to 175

Description

This FDP8870 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.  It has been optimized for low gate charge, low r _DS(ON) and fast switching speed.



Parameters:

Technical/Catalog Information	FDP8870
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	156A
Rds On (Max) @ Id, Vgs	4.1 mOhm @ 35A, 10V
Input Capacitance (Ciss) @ Vds	5200pF @ 15V
Power - Max	160W
Packaging	Tube
Gate Charge (Qg) @ Vgs	132nC @ 10V
Package / Case	TO-220AB
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDP8870 FDP8870