Transistor Polarity
: N-Channel
Gate-Source Breakdown Voltage
: +/- 20 V
Configuration
: Single
Maximum Operating Temperature
: + 175 C
Drain-Source Breakdown Voltage
: 30 V
Mounting Style
: Through Hole
Packaging
: Tube
Package / Case
: TO-220AB
Resistance Drain-Source RDS (on)
: 0.059 Ohms
Continuous Drain Current
: 92 A
Features: • rDS(ON) = 5.9mΩ, VGS = 10V, ID = 35A
• rDS(ON) = 7.0mΩ, VGS = 4.5V, ID = 35A
• High performance trench technology for extremely low rDS(ON)
• Low gate charge
• High power and current handling capabilityApplication• DC/DC convertersSpecifications
|
Symbol |
Parameter |
Ratings |
Units |
| VDSS |
Drain to Source Voltage |
30 |
V |
| VGS |
Gate to Source Voltage |
±20 |
V |
| ID |
Drain Current
Continuous (TC=25, VGS = 10V) |
92 |
A |
| Continuous (TC =25, VGS =4.5V) |
985 |
A |
| Continuous (Tamb = 25, VGS = 10V, RJA = 62/W) |
16 |
A |
| Pulsed |
Figure 4 |
A |
| EAS |
Single Pulse Avalanche Energy (Note 1) |
74 |
mJ |
| PD |
Power dissipation |
80 |
W |
| Derate above 25 |
0.53 |
W/ |
| TJ, TSTG |
Operating and Storage Temperature |
-55 to 175 |
|
DescriptionThis FDP8896 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
Parameters: | Technical/Catalog Information | FDP8896 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 92A |
| Rds On (Max) @ Id, Vgs | 5.9 mOhm @ 35A, 10V |
| Input Capacitance (Ciss) @ Vds | 2525pF @ 15V |
| Power - Max | 80W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 67nC @ 10V |
| Package / Case | TO-220AB |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDP8896
FDP8896
|
FDP8896 Data Sheet
