FDR4410

Resistance Drain-Source RDS (on) :
Packaging :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 9.3 A
Configuration : Single Quint Drain Dual Source
Package / Case : SuperSOT-8


Features:

·9.3 A, 30 V. RDS(ON) = 0.013 W @ VGS = 10 V
                       RDS(ON) = 0.020 W @ VGS = 4.5 V.
·High density cell design for extremely low RDS(ON).
·Proprietary SuperSOTTM-8 small outline surface mount package with high power and current handling capability.


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	30	V
VGSS	Gate-Source Voltage	±20	V
ID	Draint Current - Continuous (Note 1)	9.3	A
	- Pulsed	4.0
PD	Maximum Power Dissipation (Note 1a)	1.8	W
	(Note 1b)	1
	(Note 1c)	0.9
TJ, TSTG	Operating and Storage Junction Temperature Range	-55 to +150	°C

Description

The FDR4410 has been designed as a smaller, low cost alternative to the popular Si4410DY.

The FDR4410 SuperSOTTM-8 package is 40% smaller than the SO-8 package.

The FDR4410 SuperSOTTM-8 advanced package design and optimized pinout allow the typical power dissipation to be similar to the bigger SO-8 package.