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FDR8305N

MOSFET SSOT-8 N-CH DUAL 20V

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SeekIC No. : 00162132 Detail

FDR8305N: MOSFET SSOT-8 N-CH DUAL 20V

FDR8305N Data Sheet

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Part Number:
FDR8305N
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 8 V Continuous Drain Current : 4.5 A
Resistance Drain-Source RDS (on) : 0.015 Ohms Configuration : Dual Dual Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SSOT-8 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 8 V
Configuration : Dual Dual Drain
Continuous Drain Current : 4.5 A
Resistance Drain-Source RDS (on) : 0.015 Ohms
Package / Case : SSOT-8


Features:

• 4.5 A, 20 V. RDS(ON) = 0.022 @ VGS = 4.5 V RDS(ON) = 0.028 @ VGS = 2.5 V.
• Low gate charge (16.2nC typical).
• Fast switching speed.
• High performance trench technology for extremely low RDS(ON).
• Small footprint (38% smaller than a standard SO-8);low profile package (1 mm thick); power handling capability similar to SO-8.


Application

• Load switch
• Motor driving
• Power Management


Pinout

Connection Diagram


Specifications

Symbol
Parameter
Ratings
Units
VDSS
 Drain-Source Voltage
20
V
VGSS
 Gate-Source Voltage
±8
V
ID
 Drain Current Continuous (Note 1a)
Pulsed
4.5
A
20
PD
 Power Dissipation for Single Operation (Note 1a)
0.8
W
TJ, TSTG
 Operating and Storage Junction Temperature Range
-55 to +150
°C



Description

These FDR8305N N-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.




Parameters:

Technical/Catalog InformationFDR8305N
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 N-Channel (Dual)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C4.5A
Rds On (Max) @ Id, Vgs22 mOhm @ 4.5A, 4.5V
Input Capacitance (Ciss) @ Vds 1600pF @ 10V
Power - Max800mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs23nC @ 4.5V
Package / CaseSuperSOT-8
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDR8305N
FDR8305N



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