FDR8308P

MOSFET SSOT-8 P-CH DUAL -20

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SeekIC No. : 00161612 Detail

FDR8308P: MOSFET SSOT-8 P-CH DUAL -20

floor Price/Ceiling Price

Part Number:
FDR8308P
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/17

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 20 V
Gate-Source Breakdown Voltage : +/- 8 V Continuous Drain Current : 3.2 A
Resistance Drain-Source RDS (on) : 0.05 Ohms Configuration : Dual Dual Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SSOT-8 Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 8 V
Configuration : Dual Dual Drain
Continuous Drain Current : 3.2 A
Resistance Drain-Source RDS (on) : 0.05 Ohms
Package / Case : SSOT-8


Features:

·-3.2 A, -20 V. RDS(ON) = 0.050 W @ VGS = -4.5 V,
                         RDS(ON) = 0.070 W @ VGS = -2.5 V.
·Low gate charge (13nC typical).
·High performance trench technology for extremely low RDS(ON).
·SuperSOTTM-8 package: small footprint (40% less than SO-8); low profile(1mmthick); maximum power comparable to SO-8.



Specifications

Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
20
V
VGSS
Gate-Source Voltage
±8
V
ID
Draint Current - Continuous (Note 1)
-3.2
A
- Pulsed
-20
PD
Power Dissipation for Single Operation (Note 1a)
0.8
W
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C



Description

The SuperSOT-8 family of P-Channel Logic Level MOSFETs FDR8308P have been designed to provide a low profile, small footprint alternative to industry standard SO-8 little foot type product. These P-Channel Logic Level MOSFETs FDR8308P are produced using Fairchild Semiconductor's advanced PowerTrench process that has been tailored to minimize the on-state resistance and yet maintain superior switching performance.

These devices FDR8308P are well suited for portable electronics applications: load switching and power management, battery charging circuits, and DC/DC conversion.




Parameters:

Technical/Catalog InformationFDR8308P
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 P-Channel (Dual)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C3.2A
Rds On (Max) @ Id, Vgs50 mOhm @ 3.2A, 4.5V
Input Capacitance (Ciss) @ Vds 1240pF @ 10V
Power - Max800mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs19nC @ 4.5V
Package / CaseSuperSOT-8
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDR8308P
FDR8308P
FDR8308PTR ND
FDR8308PTRND
FDR8308PTR



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