MOSFET SSOT-8 P-CH DUAL -20
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 20 V | ||
Gate-Source Breakdown Voltage : | +/- 8 V | Continuous Drain Current : | 3.2 A | ||
Resistance Drain-Source RDS (on) : | 0.05 Ohms | Configuration : | Dual Dual Drain | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SSOT-8 | Packaging : | Reel |
Symbol |
Parameter |
Ratings |
Units |
VDSS |
Drain-Source Voltage |
20 |
V |
VGSS |
Gate-Source Voltage |
±8 |
V |
ID |
Draint Current - Continuous (Note 1) |
-3.2 |
A |
- Pulsed |
-20 | ||
PD |
Power Dissipation for Single Operation (Note 1a) |
0.8 |
W |
TJ, TSTG |
Operating and Storage Junction Temperature Range |
-55 to +150 |
°C |
The SuperSOT-8 family of P-Channel Logic Level MOSFETs FDR8308P have been designed to provide a low profile, small footprint alternative to industry standard SO-8 little foot type product. These P-Channel Logic Level MOSFETs FDR8308P are produced using Fairchild Semiconductor's advanced PowerTrench process that has been tailored to minimize the on-state resistance and yet maintain superior switching performance.
These devices FDR8308P are well suited for portable electronics applications: load switching and power management, battery charging circuits, and DC/DC conversion.
Technical/Catalog Information | FDR8308P |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | 2 P-Channel (Dual) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25° C | 3.2A |
Rds On (Max) @ Id, Vgs | 50 mOhm @ 3.2A, 4.5V |
Input Capacitance (Ciss) @ Vds | 1240pF @ 10V |
Power - Max | 800mW |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 19nC @ 4.5V |
Package / Case | SuperSOT-8 |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FDR8308P FDR8308P FDR8308PTR ND FDR8308PTRND FDR8308PTR |