MOSFET DISC BY MFG 2/02
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | 20 V |
Gate-Source Breakdown Voltage : | +/- 8 V | Continuous Drain Current : | 6.1 A |
Configuration : | Single Quint Drain Dual Source | Maximum Operating Temperature : | + 150 C |
Mounting Style : | SMD/SMT | Package / Case : | SuperSOT-8 |
Packaging : | Reel |
Symbol |
Parameter |
Ratings |
Units |
VDSS |
Drain-Source Voltage |
-20 |
V |
VGSS |
Gate-Source Voltage |
±8 |
V |
ID |
Draint Current - Continuous (Note 1) |
-6.1 |
A |
- Pulsed |
-18 | ||
PD |
Maximum Power Dissipation (Note 1a) |
1.8 |
W |
(Note 1b) |
1.0 | ||
(Note 1c) |
0.9 | ||
TJ, TSTG |
Operating and Storage Junction Temperature Range |
-55 to +150 |
°C |
SuperSOTTM -8 P-Channel enhancement mode power field effect transistors FDR836P are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices FDR836P are particularly suited for low voltage applications such as battery powered circuits or portable electronics where low in-line power loss, fast switching and resistance to transients are needed.