FDR836P

Resistance Drain-Source RDS (on) :
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 8 V
Continuous Drain Current : 6.1 A
Configuration : Single Quint Drain Dual Source
Package / Case : SuperSOT-8


Features:

• -6.1 A, -20 V. RDS(ON) = 0.030 W @ VGS = -4.5 V
                         RDS(ON) = 0.040 W @ VGS = -2.5 V
• High density cell design for extremely low RDS(ON).
• Small footprint (38% smaller than a standard SO-8); low profile package (1 mm thick); power handling capability similar to SO-8.


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	-20	V
VGSS	Gate-Source Voltage	±8	V
ID	Draint Current - Continuous (Note 1)	-6.1	A
	- Pulsed	-18
PD	Maximum Power Dissipation (Note 1a)	1.8	W
	(Note 1b)	1.0
	(Note 1c)	0.9
TJ, TSTG	Operating and Storage Junction Temperature Range	-55 to +150	°C

Description

SuperSOTTM -8 P-Channel enhancement mode power field effect transistors FDR836P are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices FDR836P are particularly suited for low voltage applications such as battery powered circuits or portable electronics where low in-line power loss, fast switching and resistance to transients are needed.