FDR836P

MOSFET DISC BY MFG 2/02

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FDR836P Picture
SeekIC No. : 00166419 Detail

FDR836P: MOSFET DISC BY MFG 2/02

floor Price/Ceiling Price

Part Number:
FDR836P
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/28

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 8 V Continuous Drain Current : 6.1 A
Configuration : Single Quint Drain Dual Source Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : SuperSOT-8
Packaging : Reel    

Description

Resistance Drain-Source RDS (on) :
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 8 V
Continuous Drain Current : 6.1 A
Configuration : Single Quint Drain Dual Source
Package / Case : SuperSOT-8


Features:

• -6.1 A, -20 V. RDS(ON) = 0.030 W @ VGS = -4.5 V
                         RDS(ON) = 0.040 W @ VGS = -2.5 V
• High density cell design for extremely low RDS(ON).
• Small footprint (38% smaller than a standard SO-8); low profile package (1 mm thick); power handling capability similar to SO-8.



Pinout

  Connection Diagram


Specifications

Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
-20
V
VGSS
Gate-Source Voltage
±8
V
ID
Draint Current - Continuous (Note 1)
-6.1
A
- Pulsed
-18
PD
Maximum Power Dissipation (Note 1a)
1.8
W
(Note 1b)
1.0
(Note 1c)
0.9
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C



Description

SuperSOTTM -8 P-Channel enhancement mode power field effect transistors FDR836P are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices FDR836P are particularly suited for low voltage applications such as battery powered circuits or portable electronics where low in-line power loss, fast switching and resistance to transients are needed.




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