FDR838P

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 8 V
Continuous Drain Current : 8 A
Resistance Drain-Source RDS (on) : 0.014 Ohms
Package / Case : SSOT-8
Configuration : Single Quint Drain Dual Source


Features:

• -8 A, -20 V. RDS(ON) = 0.017 W @ VGS = -4.5 V
                     RDS(ON) = 0.024 W @ VGS = -2.5 V
• Low gate charge (30nC typical).
• Fast switching speed.
• High performance trench technology for extremely low RDS(ON).
• Small footprint (38% smaller than a standard SO-8); low profile package (1 mm thick); power handling capability similar to SO-8.


Application

• Load switch
• Motor driving
• Power Management


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	-20	V
VGSS	Gate-Source Voltage	±8	V
ID	Draint Current - Continuous (Note 1)	-8	A
	- Pulsed	-50
PD	Maximum Power Dissipation (Note 1a)	1.8	W
	(Note 1b)	1.0
	(Note 1c)	0.9
TJ, TSTG	Operating and Storage Junction Temperature Range	-55 to +150	°C

Description

These FDR838P P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Parameters:

Technical/Catalog Information	FDR838P
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	8A
Rds On (Max) @ Id, Vgs	17 mOhm @ 8A, 4.5V
Input Capacitance (Ciss) @ Vds	3300pF @ 10V
Power - Max	900mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	45nC @ 4.5V
Package / Case	SSOT-8
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDR838P FDR838P