FDR840P

MOSFET SSOT-8 P-CH 2.5V

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FDR840P Picture
SeekIC No. : 00161001 Detail

FDR840P: MOSFET SSOT-8 P-CH 2.5V

floor Price/Ceiling Price

Part Number:
FDR840P
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/27

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 20 V
Gate-Source Breakdown Voltage : +/- 12 V Continuous Drain Current : 10 A
Resistance Drain-Source RDS (on) : 0.012 Ohms Configuration : Single Quint Drain Dual Source
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SSOT-8 Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 10 A
Gate-Source Breakdown Voltage : +/- 12 V
Resistance Drain-Source RDS (on) : 0.012 Ohms
Package / Case : SSOT-8
Configuration : Single Quint Drain Dual Source


Features:

• 10 A, 20 V. RDS(ON) = 12 m @ VGS = 4.5 V
                          RDS(ON) = 17.5 m @ VGS = 2.5 V
• Fast switching speed.
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability



Application

• Power management
• Load switch
• Battery protection



Pinout

  Connection Diagram


Specifications

Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
-20
V
VGSS
Gate-Source Voltage
±12
V
ID
Draint Current - Continuous (Note 1)
-10
A
- Pulsed
-50
PD
Maximum Power Dissipation (Note 1a)
1.8
W
(Note 1b)
1.0
(Note 1c)
0.9
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C



Description

This FDR840P P-Channel 2.5V specified MOSFET uses a rugged gate PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V 12V).




Parameters:

Technical/Catalog InformationFDR840P
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C10A
Rds On (Max) @ Id, Vgs12 mOhm @ 10A, 4.5V
Input Capacitance (Ciss) @ Vds 4481pF @ 10V
Power - Max900mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs60nC @ 4.5V
Package / CaseSSOT-8
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDR840P
FDR840P



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