FDR840P

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 10 A
Gate-Source Breakdown Voltage : +/- 12 V
Resistance Drain-Source RDS (on) : 0.012 Ohms
Package / Case : SSOT-8
Configuration : Single Quint Drain Dual Source


Features:

• 10 A, 20 V. RDS(ON) = 12 m @ VGS = 4.5 V
                          RDS(ON) = 17.5 m @ VGS = 2.5 V
• Fast switching speed.
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability


Application

• Power management
• Load switch
• Battery protection


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	-20	V
VGSS	Gate-Source Voltage	±12	V
ID	Draint Current - Continuous (Note 1)	-10	A
	- Pulsed	-50
PD	Maximum Power Dissipation (Note 1a)	1.8	W
	(Note 1b)	1.0
	(Note 1c)	0.9
TJ, TSTG	Operating and Storage Junction Temperature Range	-55 to +150	°C

Description

This FDR840P P-Channel 2.5V specified MOSFET uses a rugged gate PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V 12V).

Parameters:

Technical/Catalog Information	FDR840P
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	10A
Rds On (Max) @ Id, Vgs	12 mOhm @ 10A, 4.5V
Input Capacitance (Ciss) @ Vds	4481pF @ 10V
Power - Max	900mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	60nC @ 4.5V
Package / Case	SSOT-8
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDR840P FDR840P