FDR842P

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 8 V
Drain-Source Breakdown Voltage : - 12 V
Continuous Drain Current : 11 A
Resistance Drain-Source RDS (on) : 0.009 Ohms
Package / Case : SSOT-8
Configuration : Single Quint Drain Dual Source


Features:

• 11 A, 12 V RDS(ON) = 9 m @ VGS = 4.5 V
                         RDS(ON) = 12 m @ VGS = 2.5 V
                         RDS(ON) = 16 m @ VGS = 1.8 V
• Fast switching speed
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability


Application

• Power management
• Load switch
• Battery protection


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	-12	V
VGSS	Gate-Source Voltage	±8	V
ID	Draint Current - Continuous (Note 1)	-11	A
	- Pulsed	-50
PD	Maximum Power Dissipation (Note 1a)	1.8	W
	(Note 1b)	1.0
	(Note 1c)	0.9
TJ, TSTG	Operating and Storage Junction Temperature Range	-55 to +150	°C

Description

This FDR842P P-Channel 1.8V specified MOSFET uses Fairchild's advanced low voltage PowerTrench process. It has been optimized for battery power management applications.

Parameters:

Technical/Catalog Information	FDR842P
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	12V
Current - Continuous Drain (Id) @ 25° C	11A
Rds On (Max) @ Id, Vgs	9 mOhm @ 11A, 4.5V
Input Capacitance (Ciss) @ Vds	5350pF @ 6V
Power - Max	900mW
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	80nC @ 4.5V
Package / Case	SSOT-8
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDR842P FDR842P FDR842PDKR ND FDR842PDKRND FDR842PDKR