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FDR8508P

MOSFET SSOT-8 P-CH DUAL 30V

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SeekIC No. : 00162440 Detail

FDR8508P: MOSFET SSOT-8 P-CH DUAL 30V

FDR8508P Data Sheet

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Part Number:
FDR8508P
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/19

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 3 A
Resistance Drain-Source RDS (on) : 0.04 Ohms Configuration : Dual Dual Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SSOT-8 Packaging : Reel    

Description

Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : - 30 V
Configuration : Dual Dual Drain
Continuous Drain Current : 3 A
Resistance Drain-Source RDS (on) : 0.04 Ohms
Package / Case : SSOT-8


Parameters:

Technical/Catalog InformationFDR8508P
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 P-Channel (Dual)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C3A
Rds On (Max) @ Id, Vgs52 mOhm @ 3A, 10V
Input Capacitance (Ciss) @ Vds 750pF @ 15V
Power - Max800mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs12nC @ 5V
Package / CaseSuperSOT-8
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDR8508P
FDR8508P



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