FDR8521L

MOSFET SSOT-8 LD SW 3-20V

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FDR8521L Picture
SeekIC No. : 00162955 Detail

FDR8521L: MOSFET SSOT-8 LD SW 3-20V

floor Price/Ceiling Price

Part Number:
FDR8521L
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/25

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : 20 V
Continuous Drain Current : 2.9 A Resistance Drain-Source RDS (on) : 0.054 Ohms
Configuration : Dual Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : SSOT-8
Packaging : Reel    

Description

Gate-Source Breakdown Voltage :
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Configuration : Dual
Continuous Drain Current : 2.9 A
Resistance Drain-Source RDS (on) : 0.054 Ohms
Package / Case : SSOT-8


Features:

• VDROP= 0.07 V @ VIN= 12 V, IL= 1 A.R(ON) = 0.07
   VDROP= 0.115 V @ VIN= 5 V, IL= 1 A.R(ON) = 0.115
• VDROP= 0.2 V @ VIN= 12 V, IL=2.9 A.R(ON) = 0.07
   VDROP= 0.2 V @ VIN= 5 V,IL= 1.8 A.R(ON) = 0.115 .
• Control MOSFET (Q1) includes Zener protection for ESD ruggedness (>6kV Human Body Model).
• High density cell design for extremely low on-resistance.



Application

• Power management
• Load switch



Pinout

  Connection Diagram


Specifications

Symbol
Parameter
FDR8321L
Units
VIN
Input Voltage Range (Note 1)
3 - 20
V
VON/OFF
On/Off Voltage Range
2.5 - 8
V
I L
Load Current - Continuous (Note 2)
2.9
A
- Pulsed
10
PD
Maximum Power Dissipation (Note 2)
0.8
W

TJ,TSTG

Operating and Storage Temperature Range
-55 to 150

°C

ESD
Electrostatic Discharge Rating MIL-STD-883D
Human-Body-Model (100pf/1500 Ohm)

6

 
kV



Description

This device FDR8521L is designed for configuration as a load switch and is particularly suited for power management in portable battery powered electronic equipment. Designed to operate from 3V to 20V input and supply up to 2.9A, the device FDR8521L features a small N-Channel MOSFET (Q1) together with a large P-Channel Power MOSFET (Q2) in a single SO-8 package.




Parameters:

Technical/Catalog InformationFDR8521L
VendorFairchild Semiconductor (VA)
CategoryIntegrated Circuits (ICs)
TypeHigh Side Switch
Number of Outputs1
Voltage - Input3 ~ 20 V
Package / CaseSuperSOT-8
PackagingDigi-Reel?
Current Limit2.9A
Internal Switch(s)Yes
Operating Temperature-55°C ~ 150°C
Rds (On)70 mOhm
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDR8521L
FDR8521L
FDR8521LDKR ND
FDR8521LDKRND
FDR8521LDKR



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