FDR8702H

Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Transistor Polarity : N and P-Channel
Configuration : Dual Dual Drain
Drain-Source Breakdown Voltage : +/- 20 V
Gate-Source Breakdown Voltage : +/- 12 V, +/- 8 V
Resistance Drain-Source RDS (on) : 0.038 Ohms
Continuous Drain Current : + 3.6 A, - 2.6 A
Package / Case : SSOT-8


Features:

• N channel RDS(ON) = 38 m @ VGS = 4.5 V
  3.6 A, 20V RDS(ON) = 54 m @ VGS = 2.5 V
• P channel RDS(ON) = 80 m @ VGS = 4.5 V
2.6 A, 20V RDS(ON) = 110 m @ VGS = 2.5 V
• Fast switching speed.
• High performance trench technology for extremely low RDS(ON)


Application

DC/DC converter Power management


Pinout




Specifications

Symbol	Parameter	Ratings		Units
		Q1 (N)	Q2 (P)
VDSS	Drain-Source Voltage	20	-20	V
VGSS	Gate-Source Voltage	±12	±8	V
ID	Drain Current Continuous (Note 1a) Pulsed	3.6	2.6	A
		15	10
PD	Power Dissipation for Single Operation (Note 1a)	0.8		W
TJ, TSTG	Operating and Storage Junction Temperature Range	55 to +150		°C

Description

These FDR8702H N & P-Channel MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

Parameters:

Technical/Catalog Information	FDR8702H
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N and P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	3.6A, 2.6A
Rds On (Max) @ Id, Vgs	38 mOhm @ 3.6A, 4.5V
Input Capacitance (Ciss) @ Vds	650pF @ 10V
Power - Max	800mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	10nC @ 4.5V
Package / Case	SuperSOT-8
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDR8702H FDR8702H