FDS2570

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Drain-Source Breakdown Voltage : 150 V
Resistance Drain-Source RDS (on) : 0.08 Ohms
Package / Case : SOIC-8 Narrow
Continuous Drain Current : 4 A


Features:

• 4A, 150 V. R_DS(ON) = 0.072 @ V_GS = 10 V
                    R_DS(ON) = 0.080 @ V_GS = 6 V
• Low gate charge
• Fast switching speed
• High performance trench technology for extremely low R_DS(ON)
• High power and current handling capability


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	150	V
VGSS	Gate-Source Voltage	± 20
ID	Drain Current Continuous (Note 1a)               Pulsed	4	A
		30
PD	Power Dissipation (Note 1a)                   (Note 1b)                   (Note 1c)	2.5	W
		1.2
		1.0
TJ, TSTG	Operating and Storage Junction Temperature Range	55 to +150	°C

Description

This FDS2570 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.These MOSFETs FDS2570 feature faster switching and lower gate charge than other MOSFETs with  comparable R_DS(ON) specifications.

The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.