FDS2572

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Drain-Source Breakdown Voltage : 150 V
Package / Case : SOIC-8 Narrow
Continuous Drain Current : 4.9 A
Resistance Drain-Source RDS (on) : 0.047 Ohms


Features:

• R_DS(ON) = 0.040 (Typ.), V_GS = 10V
• Q_g(TOT) = 29nC (Typ.), V_GS = 10V
• Low Q_RR Body Diode
• Maximized efficiency at high frequencies
• UIS Rated




Application

• DC/DC converters
• Telecom and Data-Com Distributed Power Architectures
• 48-volt I/P Half-Bridge/Full-Bridge
• 24-volt Forward and Push-Pull topologies




Pinout






Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	150	V
VGSS	Gate-Source Voltage	± 20	V
ID	Drain Current Continuous (TC = 25, VGS = 10V, RJA = 50 /W) Continuous (TC = 100, VGS = 10V, RJA = 50 /W) Pulsed	4.9	A
		3.1	A
		Figure 4	A
PD	Power Dissipation Derate above 25	2.5 20	W mW/
TJ, TSTG	Operating and Storage Junction Temperature Range	55 to +150	°C

Product	Product status	Eco Status	Pricing*	Package type	Leads	Packing method	Package Drawing	Package Marking Convention**
FDS2572	Full Production	RoHS Compliant	$1.48	SO-8	8	TAPE REEL		Line 1: $Y (Fairchild logo) &Z (Asm. Plant Code) &2 (2-Digit Date Code) &K Line 2: FDS2572

* Fairchild 1,000 piece Budgetary Pricing

** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples

Package marking information for product FDS2572 is available. Click here for more information .

Description

UltraFET^® devices FDS2572 combine characteristics that enable benchmark efficiency in power conversion applications.Optimized for Rds(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.

Parameters:

Technical/Catalog Information	FDS2572
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	150V
Current - Continuous Drain (Id) @ 25° C	4.9A
Rds On (Max) @ Id, Vgs	47 mOhm @ 4.9A, 10V
Input Capacitance (Ciss) @ Vds	2050pF @ 25V
Power - Max	2.5W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	38nC @ 10V
Package / Case	8-SOIC
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDS2572 FDS2572 FDS2572CT ND FDS2572CTND FDS2572CT