FDS2582

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Drain-Source Breakdown Voltage : 150 V
Package / Case : SOIC-8 Narrow
Continuous Drain Current : 4.5 A
Resistance Drain-Source RDS (on) : 0.057 Ohms


Features:

•r_DS(ON)= 57mΩ (Typ.), V_GS = 10V, I_D = 4.1A
•Q _g(tot) = 19nC (Typ.), V_GS = 10V
• Low Miller Charge
•Low QRR Body Diode
• Optimized efficiency at high frequencies
• UIS Capability (Single Pulse and Repetitive Pulse)




Application

• DC/DC converters and Off-Line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V Systems
• High Voltage Synchronous Rectifier
• Direct Injection / Diesel Injection Systems
• 42V Automotive Load Control
• Electronic Valve Train Systems




Pinout






Specifications

Product	Product status	Eco Status	Pricing*	Package type	Leads	Packing method	Package Drawing	Package Marking Convention**
FDS2582	Full Production	RoHS Compliant	$1.06	SO-8	8	TAPE REEL		Line 1: $Y (Fairchild logo) &Z (Asm. Plant Code) &2 (2-Digit Date Code) &K Line 2: FDS2582

* Fairchild 1,000 piece Budgetary Pricing

** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples

Package marking information for product FDS2582 is available. Click here for more information .

Symbol	Parameter	Ratings	Units
VDSS	Drain to Source Voltage	150	V
VGS	Gate to Source Voltage	±20	V
ID	Drain Current Continuous (TA = 25oC, VGS = 10V, RJA = 55/W)	4.1	A
	Continuous (TA = 25 C, VGS = 5V, RJA = 55/W)	2.6	A
	Pulsed	Figure 4	A
EAS	Single Pulse Avalanche Energy ( Note 1)	252	mJ
PD	Power dissipation	2.5	W
	Derate above 25oC	20	mW/
TJ, TSTG	Operating and Storage Temperature	-55 to 150

Parameters:

Technical/Catalog Information	FDS2582
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	150V
Current - Continuous Drain (Id) @ 25° C	4.1A
Rds On (Max) @ Id, Vgs	66 mOhm @ 4.1A, 10V
Input Capacitance (Ciss) @ Vds	1290pF @ 25V
Power - Max	2.5W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	25nC @ 10V
Package / Case	8-SOIC
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDS2582 FDS2582