FDS3812

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Configuration : Dual Dual Drain
Drain-Source Breakdown Voltage : 80 V
Package / Case : SOIC-8 Narrow
Continuous Drain Current : 3.4 A
Resistance Drain-Source RDS (on) : 0.074 Ohms


Features:

•3.4 A, 80 V. RDS(ON) = 74 m @ VGS = 10 V
                   RDS(ON) = 84 m @ VGS = 6 V
• Fast switching speed
• Low gate charge (13nC typ)
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	80	V
VGSS	Gate-Source Voltage	+20	V
ID	Draint Current - Continuous (Note 1)	20	A
	- Pulsed	2
PD	Maximum Power Dissipation (Note 1a)	1.6	W
	(Note 1b)	1.0
	(Note 1c)	0.9
TJ, TSTG	Operating and Storage Junction Temperature Range	55 to +175	°C

Description

This FDS3812 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC  converters using either synchronous or conventional switching PWM controllers.

These MOSFETs FDS3812 feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

Parameters:

Technical/Catalog Information	FDS3812
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 N-Channel (Dual)
Drain to Source Voltage (Vdss)	80V
Current - Continuous Drain (Id) @ 25° C	3.4A
Rds On (Max) @ Id, Vgs	74 mOhm @ 3.4A, 10V
Input Capacitance (Ciss) @ Vds	634pF @ 40V
Power - Max	900mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	18nC @ 10V
Package / Case	8-SOIC
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDS3812 FDS3812