FDS5690

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Continuous Drain Current : 7 A
Package / Case : SOIC-8 Narrow
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 0.028 Ohms


Features:

• 7 A, 60 V. RDS(on) = 0.028 @ VGS = 10 V
                   RDS(on) = 0.033 @ VGS = 6 V.
• Low gate charge (23nC typical).
• Fast switching speed.
• High performance trench technology for extremely low RDS(ON).
• High power and current handling capability.


Application

• DC/DC converte


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	60	V
VGSS	Gate-Source Voltage	+20	V
ID	Draint Current - Continuous (Note 1)	7	A
	- Pulsed	50
PD	Maximum Power Dissipation (Note 1a)	2.5	W
	(Note 1b)	1.2
	(Note 1c)	1
TJ, TSTG	Operating and Storage Junction Temperature Range	55 to +150	°C

Description

This FDS5690 N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

These devices FDS5690 are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Parameters:

Technical/Catalog Information	FDS5690
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	7A
Rds On (Max) @ Id, Vgs	28 mOhm @ 7A, 10V
Input Capacitance (Ciss) @ Vds	1107pF @ 30V
Power - Max	1W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	32nC @ 10V
Package / Case	8-SOIC
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDS5690 FDS5690