FDS6984S

MOSFET SO-8 DUAL N-CH

product image

FDS6984S Picture
SeekIC No. : 00160759 Detail

FDS6984S: MOSFET SO-8 DUAL N-CH

floor Price/Ceiling Price

Part Number:
FDS6984S
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/28

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 5.5 A, 8.5 A
Resistance Drain-Source RDS (on) : 0.019 Ohms Configuration : Dual Dual Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Dual Dual Drain
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 0.019 Ohms
Continuous Drain Current : 5.5 A, 8.5 A


Features:

•  Q2: Optimized to minimize conduction losses
    Includes SyncFET Schottky diode8.5A,  30V RDS(on)= 19 mΩ @ VGS = 10V
                                                                        RDS(on)= 28 mΩ @ VGS = 4.5V
•  Q1: Optimized for low switching losses
     Low gate charge ( 5 nC typical) 5.5A,  30V RDS(on)= 0.040Ω @ VGS = 10V
                                                                        RDS(on)= 0.055Ω @ VGS = 4.5V



Pinout

  Connection Diagram


Specifications

Symbol Parameter Q2 Q1 Units
VDSS Drain-Source Voltage 30 30 V
VGSS Gate-Source Voltage ±20 ±16 V
ID Drain Current - Continuous (Note 1a)
- Pulsed
8.5 5.5 A
30 20
PD Power Dissipation for Dual Operation 2 W

Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)

1.6
1
0.9
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C



Description

The FDS6984S is designed to replace two single SO-8 MOSFETs and Schottky diodea in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6984S contains two unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency.

The FDS6984S high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the low- side switch (Q2) is optimized to reduce conduction losses. Q2 also includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology.




Parameters:

Technical/Catalog InformationFDS6984S
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 N-Channel (Dual)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C8.5A, 5.5A
Rds On (Max) @ Id, Vgs19 mOhm @ 8.5A, 10V
Input Capacitance (Ciss) @ Vds 1233pF @ 15V
Power - Max2W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs12nC @ 4.5V
Package / CaseSO-8
FET Feature*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDS6984S
FDS6984S
FDS6984STR ND
FDS6984STRND
FDS6984STR



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Computers, Office - Components, Accessories
Memory Cards, Modules
Batteries, Chargers, Holders
RF and RFID
View more