FDS7779Z

MOSFET 30V P-Channel PowerTrench

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FDS7779Z Picture
SeekIC No. : 00161922 Detail

FDS7779Z: MOSFET 30V P-Channel PowerTrench

floor Price/Ceiling Price

Part Number:
FDS7779Z
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/29

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 30 V
Gate-Source Breakdown Voltage : +/- 25 V Continuous Drain Current : - 16 A
Resistance Drain-Source RDS (on) : 0.0072 Ohms Configuration : Single Quad Drain Triple Source
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Drain-Source Breakdown Voltage : - 30 V
Package / Case : SOIC-8 Narrow
Continuous Drain Current : - 16 A
Gate-Source Breakdown Voltage : +/- 25 V
Resistance Drain-Source RDS (on) : 0.0072 Ohms


Features:

• 16 A, 30 V. RDS(ON) = 7.2 mΩ    @  VGS = 10 V
                          RDS(ON) = 11.5 mΩ  @  VGS = 4.5 V
• ESD protection diode (note 3)
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability



Pinout

  Connection Diagram


Specifications

Symbol
Parameter
Ratings
Units
VDSS


Drain-Source Voltage

-30

V
VGSS
Gate-Source Voltage
±25
V
ID
Drain Current Continuous (Note 1a)
                       Pulsed
-16
A
-50

PD
Power Dissipation for Single Operation (Note 1a)
                                                              (Note 1b)
                                                              (Note 1c)
2.5
W
1.2
1.0
TJ, TSTG
Operating and Storage Junction Temperature Range
55 to +175
°C



Description

This FDS7779Z P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers.

These MOSFETs FDS7779Z feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.

The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.


Parameters:

Technical/Catalog InformationFDS7779Z
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C16A
Rds On (Max) @ Id, Vgs7.2 mOhm @ 16A, 10V
Input Capacitance (Ciss) @ Vds 3800pF @ 15V
Power - Max1W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs98nC @ 10V
Package / Case8-SOIC
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDS7779Z
FDS7779Z



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