FDS8878

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 0.014 Ohms
Continuous Drain Current : 10.2 A


Features:

  ·rDS(ON) = 14mΩ, VGS = 10V, ID = 10.2A
  ·rDS(ON) = 17mΩ, VGS = 4.5V, ID = 9.3A
  ·High performance trench technology for extremely low rDS(ON)
  ·Low gate charge
  ·High power and current handling capability


Application

 · DC/DC converters


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	30	V
VGSS	Gate-Source Voltage	±20	V
ID	Drain Current Continuous (TA = 25°C, VGS = 10V, RJA = 50°C/W)	10.2	A
	Continuous (TA = 25°C, VGS = 4.5V, RJA = 50°C/W)
	Pulsed	9.3	A
PD	Single Pulse Avalanche Energy (Note 1)	Figure4	A
EAS	Power dissipation	57	mJ
		2.5	W
	Derate above 25°C	20	mW/°C
TJ, TSTG	Operating and Storage Junction Temperature Range	-55to+150	°C

Description

This FDS8878 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

Parameters:

Technical/Catalog Information	FDS8878
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	10.2A
Rds On (Max) @ Id, Vgs	14 mOhm @ 10.2A, 10V
Input Capacitance (Ciss) @ Vds	897pF @ 15V
Power - Max	2.5W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	26nC @ 10V
Package / Case	8-SOIC
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDS8878 FDS8878 FDS8878DKR ND FDS8878DKRND FDS8878DKR