FDS8880

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Package / Case : SOIC-8 Narrow
Continuous Drain Current : 11.6 A
Resistance Drain-Source RDS (on) : 0.01 Ohms


Features:

r _DS(ON)= 10mΩ , V_GS= 10V, I_D = 11.6A
r_DS(ON)= 12mΩ , V_GS = 4.5V, I_D = 10.7A
High performance trench technology for extremely low r_DS(ON) 
Low gate charge
High power and current handling capability


Application

DC/DC converters


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	30	V
VGSS	Gate-Source Voltage	± 20	V
ID	Drain Current Continuous (T = 25oC, V = 10V, R = 50/W)	11.6	A
	Continuous (TA = 25oC, VGS = 4.5V, RJA = 50/W)	10.7	A
	Pulsed	Figure 4	A
EAS	Single Pulse Avalanche Energy (Note 1)	82	mJ
PD	Power dissipation	2.5	W
	Derate above 25oC	20	mW/
TJ, TSTG	Operating and Storage Temperature	-55 to +150

Description

This FDS8880 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r_DS(ON) and fast switching speed.

Parameters:

Technical/Catalog Information	FDS8880
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	11.6A
Rds On (Max) @ Id, Vgs	10 mOhm @ 11.6A, 10V
Input Capacitance (Ciss) @ Vds	1235pF @ 15V
Power - Max	2.5W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	30nC @ 10V
Package / Case	SO-8
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDS8880 FDS8880 FDS8880TR ND FDS8880TRND FDS8880TR