Mounting Style
: SMD/SMT
Packaging
: Reel
Transistor Polarity
: P-Channel
Drain-Source Breakdown Voltage
: - 20 V
Maximum Operating Temperature
: + 150 C
Gate-Source Breakdown Voltage
: +/- 8 V
Continuous Drain Current
: 9.2 A
Package / Case
: TSSOP-8
Configuration
: Single Triple Drain Quad Source
Resistance Drain-Source RDS (on)
: 12 m Ohms
Features: 9.2 A, 20 V. RDS(ON) = 12 m@ VGS = 4.5 V
RDS(ON) = 15 m@ VGS = 2.5 V
RDS(ON) = 21.5 m@ VGS = 1.8 V
Rds ratings for use with 1.8 V logic
ESD protection diode
Low gate charge
High performance trench technology for extremely low RDS(ON)
Low profile TSSOP-8 package
ApplicationLoad switch
Motor drive
DC/DC conversion
Power management
Pinout
Specifications
| Symbol |
Parameter |
Ratings |
Units |
| VDSS |
Drain-Source Voltage |
-20 |
V |
| VGSS |
Gate-Source Voltage |
±8 |
V |
| ID |
Drain Current Continuous (Note 1a)
Pulsed |
-9.2 |
A |
| -50 |
| PD |
Total Power Dissipation (Note 1a)
(Note 1b) |
1.4 |
W |
| 1 |
| TJ, TSTG |
Operating and Storage Junction Temperature Range |
55 to +150 |
|
DescriptionThis FDW254PZ P-Channel 1.8V specified MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power
management applications with a wide range of gate drive voltage (1.8V 8V).
Parameters: | Technical/Catalog Information | FDW254PZ |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 9.2A |
| Rds On (Max) @ Id, Vgs | 12 mOhm @ 9.2A, 4.5V |
| Input Capacitance (Ciss) @ Vds | 5880pF @ 10V |
| Power - Max | 1W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 96nC @ 4.5V |
| Package / Case | 8-TSSOP |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDW254PZ
FDW254PZ
|
FDW254PZ Data Sheet
